IAUCN08S7N013 80V, N-Ch, 1.3 mΩ max, Automotive MOSFET, SSO8 (5x6), OptiMOS™ 7

Überblick

Infineon introduces its first MOSFET in our next, leading edge, power technology; OptiMOS™ 7 80V. This debut product is offered in our versatile, robust, high current SSO8 5x6mm2 SMD package. It is designed specifically for high performance, high quality and the robustness needed for demanding automotive applications. IAUCN08S7N013 is a true step forward in the area of power density.

Zusammenfassung der Merkmale

  • RDS(on) reduced > 50% from prior best
  • Industry’s best RDS(on)
  • Leading edge FOM (RDS(on) x Qg)
  • Fast switching times (turn on/off)
  • Low package resistance and inductance
  • High avalanche current capability
  • High SOA ruggedness
  • Excellent thermal performance
  • Extended qualification beyond AEC-Q101
  • Enhanced electrical testing
  • MSL1 up to 260°C peak reflow
  • 175°C operating temperature

Vorteile

  • Minimized conduction losses
  • Superior switching performance
  • Highest power density in 5x6mm package
  • High power efficiency
  • Small footprint & efficient cooling
  • Increased design ruggedness
  • Designed for Automotive robustness
  • High quality production for Automotive

Potentielle Zielanwendungen

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