100V N-Channel Power MOSFET
Wide portfolio offering of 100V N-Channel MOSFET with a variety of packages
Infineon’s broad line of 100V MOSFETs utilizes OptiMOS™ and StrongIRFET™ silicon die technology to address both low- and high-switching frequency requirements. The OptiMOS™ MOSFET family is Infineon’s best-in-class technology which is optimized for broad switching frequency and designed for high-performance applications. Offering the best figure of merit in the industry with high efficiency and power density. The StrongIRFET™ MOSFET family offers robust and excellent price/performance ratio and is optimized for switching frequencies below 100 kHz. They are designed for industrial applications requiring high current capability and ruggedness.
The family includes a variety of surface-mount and through-hole devices to meet all your power needs. These devices are suited for numerous applications including telecom, server, solar, low voltage drives, light electric vehicles, and battery management systems.
OptiMOS™
- Low RDS(on), QG, and Qgd
- High efficiency and power density
StrongIRFET™
- Rugged silicon
- High-current capability
IR MOSFET™
- Wide Portfolio
- Optimized for broadest availability from distribution partners
OptiMOS™
- Reduction in conduction losses
- Increased system efficiency
StrongIRFET™
- Robust design
- Increased carrying capability
IR MOSFET™
- Supports various applications
- Wide availability from distribution partners