FF100R12RT4 1200 V, 100 A dual IGBT module

Überblick

34 mm 1200 V, 100 A dual switch IGBT module with fast TRENCHSTOP™ IGBT4 and Emitter Controlled 4 diode.

Zusammenfassung der Merkmale

  • Extended operation temperature Tvj op
  • Low switching losses
  • Low VCEsat
  • Tvj op = 150°C
  • VCEsat with positive temperature coefficient
  • Isolated base plate
  • Standard housing

Vorteile

  • Flexibility
  • Optimal electrical performance
  • Highest reliability
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Simulation
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