1200 V TRENCHSTOP™ IGBT6

The 1200 V TRENCHSTOP™ IGBT6 is designed to meet requirements of high efficiency, lowest conduction and switching losses in hard switching and resonant topologies operating at switching frequencies above 15 kHz. The 1200 V TRENCHSTOP™ IGBT 6 is released in 2 product families – low conduction losses optimized S6 series and improved switching losses H6 series.

• IGBT6 S6 features low conduction losses of 1.85 V collector-emitter saturation voltage VCE(sat) combined with low switching losses of the HighSpeed 3 H3 series.
• IGBT6 H6 is optimized for low switching losses, provides ~15 percent lower total switching losses when compared to predecessor generation H3.

Very soft, fast recovery anti-parallel emitter controlled diode is optimized for fast recovery while still maintaining a high level of softness complementing to an excellent EMI behavior. The positive temperature coefficient allows for easy and reliable device paralleling. Very good R_G controllability allows adjustment of IGBT switching speed to the requirements of applica­tion.

The 1200 V IGBT generation TRENCHSTOP™ IGBT 6 is released in 2 product families – low conduction losses optimized S6 series and improved switching losses H6 series. 

TRENCHSTOP™ IGBT6 S6 series features low conduction losses of 1.85 V (V_CEsat) combined with low switching losses of the Highspeed3 H3 series.

TRENCHSTOP™ IGBT6 H6 series is optimized for low switching losses, provides ~15% lower total switching losses when compared to predecessor generation H3.

The IGBT6 devices can be used as direct replacement for the Highspeed3 H3 series without any changes of the design. Such plug & play replacement of H3 with new S6 IGBT may benefit up to 0.2% efficiency improvement.