Strengthening the link between the real and the digital worldIRGB4062D
Überblick
600 V, 24 A IGBT with anti-parallel diode in TO-220AB package
UltraFast 600 V, 24 A IGBT with anti-parallel diode in a TO-220AB package.
Zusammenfassung der Merkmale
- Low VCE(ON) Trench IGBT Technology
- Low switching losses
- Maximum Junction temperature 175 °C
- 5 μS short circuit SOA
- Square RBSOA
- Positive VCE(ON) Temperature co-efficient
- Positive VCE(ON) Temperature co-efficient
- Tight parameter distribution
- Lead Free Package
Vorteile
- High Efficiency in a wide range of applications
- Suitable for a wide range of switching frequencies due to
Low VCE(ON) and Low Switching losses - Rugged transient Performance for increased reliability
- Excellent Current sharing in parallel operation
- Low EMI
Potentielle Zielanwendungen
Diagramme
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