Strengthening the link between the real and the digital worldIRGB4056D
Überblick
600 V, 12 A IGBT with anti-parallel diode in TO-220AB package
UltraFast 600 V, 12 A IGBT with anti-parallel diode in TO-220AB package.
Zusammenfassung der Merkmale
- Low VCE (ON)
- Trench IGBT Technology
- Low switching losses
- Maximum Junction temperature 175 °C
- 5 µS short circuit SOA
- Square RBSOA
- 100% of the parts tested for 4X rated current (ILM)
- Positive VCE (ON) Temperature co-efficient
- Ultra fast soft Recovery Co-Pak Diode
- Tight parameter distribution
- Lead Free Package
Vorteile
- High Efficiency in a wide range of applications
- Suitable for a wide range of switching frequencies due to Low VCE (ON) and Low Switching losses
- Rugged transient Performance for increased reliability
- Excellent Current sharing in parallel operation
- Low EMI
Potentielle Zielanwendungen
Diagramme
Support
