This 330V IGBT is specifically designed for applications in Plasma Display Panels in a TO-220AB package . This device utilizes advanced trench IGBT technology to achieve low VCE(on) and low EPULSETM rating per silicon area which improve panel efficiency.
Zusammenfassung der Merkmale
- Trench IGBT Technology
- Optimized for sustain and energy recovery circuits in PDP applications
- Low VCE(on) and energy per pulse (EPULSETM) for improved panel efficiency
- High repetitive peak current capability