IKB20N60H3
Überblick
600 V IGBT with anti-parallel diode in TO263 package
High speed 600 V, 20 A hard-switching TRENCHSTOP™ IGBT3 co-packed with free-wheeling diode in a TO263 D2PAK package provides the best compromise between switching and conduction losses. The key feature of this family is a MOSFET-like turn-off switching behavior, leading to low turn off losses.
Zusammenfassung der Merkmale
- Low switching losses for high efficiency
- Excellent VCE(sat) behavior thanks to the famous Infineon TRENCHSTOP™ technology
- Fast switching behavior with low EMI emissions
- Optimized diode for target applications, meaning further improvement in switching losses
- Low gate resistor selection possible (down to 5Ω) whilst maintaining excellent switching behaviour
- Short circuit capability 5µs
- Offering Tvj(max) of 175°C
- Packaged with and without freewheeling diode for increased design freedom
Vorteile
- Low switching and conduction losses
- Very good EMI behavior
- Can be used with a small gate resistor for reduced delay time and voltage overshoot
- High current density
- Best-in-class 600 V IGBT efficiency and EMI behavior
Potentielle Zielanwendungen
Diagramme
Videos
Support