600V/1200V high-speed IGBTs

Überblick

Discrete IGBTs Breaking the Switching-Speed-Limits in Various Topologies

Infineon's high speed IGBTs are optimized for the best trade off between switching and conduction losses, enable increase of the switching frequency (20 kHz --> 70 kHz) and reduction of active components leading to lower bill-of-material cost and smaller system size.

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1200 V discrete IGBT - TRENCHSTOP™ IGBT6

The HighSpeed3 IGBT technology is a mature IGBT technology that has been released on the market several years ago. To meet customer requirements of the best efficiency and lowest power loses Infineon has developed a new generation of 1200 V discrete IGBT - TRENCHSTOP™ IGBT6. The 1200 V TRENCHSTOP™ IGBT 6  was developed as easy plug & play replacement for predecessor 1200 V HighSpeed3 IGBT series. Direct replacement of 1200 V HighSpeed3 IGBT with S6 TRENCHSTOP™ IGBT6 allows up to 0.15% efficiency improvement without any change to the board design.

The 1200 V IGBT generation TRENCHSTOP™ IGBT 6 is released in 2 product families – low conduction losses optimized S6 series and improved switching losses H6 series.
Details
Features Benefits Applications
  • Designed specifically to replace planar MOSFETs in applications switching at frequencies below 70kHz
  • Low switching losses for high efficiency
  • Excellent Vce (sat) behavior thanks to the famous Infineon TRENCHSTOP™ technology
  • Fast switching behavior with low EMI emissions
  • Optimized diode for target applications, meaning further improvement in switching losses
  • Low gate resistor selection possible (down to 5 Ω) whilst maintaining excellent switching behavior
  • Short circuit capability
  • Offering Tj (max) of 175°C
  • Packaged with and without freewheeling diode for increased design freedom
  • Excellent cost/performance
  • Low switching and conduction losses
  • Very good EMI behavior
  • A small gate resistor for reduced delay time and voltage overshoot
  • Smaller die sizes -> smaller packages
  • Best-in-class IGBT efficiency and EMI behavior

 

 

 

 

 

 

 

 

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