IGC100T75H12RDYA Unleashing the Power of Infineon's Cutting-Edge Si IGBT Technology

Überblick

Our latest EDT3 devices offer voltage classes of 750 V and 1200 V, delivering unprecedented output current for main inverter applications in low-cost and high-performance vehicles. With the ability to design and manufacture custom power modules tailored to specific application requirements, our Si IGBT & Diode solutions are set to transform the automotive landscape, elevating performance, efficiency, and reliability to new heights.

Zusammenfassung der Merkmale

  • Best-in-class current density
  • Suitable for 470 V VDC systems
  • Maximum junction temperature of 185 °C
  • High switching speed
  • Very low VCEsat
  • Very low switching losses
  • Short tail current
  • Very tight parameter distribution
  • Short circuit robustness tsc = 3 µs
  • Double side solderable and sinterable
  • Product validation acc. to AEC-Q101

Vorteile

  • Ideal for automotive requirements
  • Available in 750V and 1200V class
  • Customized development (on demand)
  • Up to 25% higher output current density
  • Decreased losses and increased max. Tvj
  • Cost benefit due to module shrink
  • Low costs per Ampere on system level
  • Less parallelization effort and costs
  • High reliability and quality
  • Drop-in replacement
  • Simple gate drive design
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