IRS21094S

Überblick

600 V half-bridge gate driver IC with shutdown and programmable deadtime

600 V Half Bridge Driver IC with typical 0.29 A source and 0.6 A sink currents in 14 Lead SOIC package for IGBTs and MOSFETs. Also available in 14 Lead PDIP, 8 Lead SOIC, and 8 Lead PDIP.

Summary of Features:

  • Floating gate driver designed for bootstrap operation
  • Fully operational to +600 V
  • Tolerant to negative transient voltage, dV/dt immune
  • Gate drive supply range from 10 V to 20 V
  • Undervoltage lockout for both channels
  • 3.3 V, 5 V, and 15 V logic input compatible
  • Cross-conduction prevention logic
  • Matched propagation delay for both channels
  • High-side output in phase with HIN input
  • Logic and power ground +/- 5 V offset
  • Programmable up to 5 µs with one external resistor
  • Lower di/dt gate driver for better noise immunity
  • Shutdown input turns off both channels

Target Applications:

Diagramme
Tools & Software
Videos
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EiceDRIVER™ 2EDL Driver IC Family

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Advantages of Infineon SOI Gate Driver Technology

1200 V Silicon-On-Insulators level-shift gate drivers from the market leader. This video demonstrates the advantages of products with Infineon SOI. E.g. Integrated bootstrap diode, Low level-shift losses - saving space and cost.

Trainings
58:35

Webinar: Every Switch needs a Driver - The right Driver makes a Difference

We offer a large portfolio of level shift high voltage gate drivers – silicon-on-insulator (SOI) and junction isolated (JI) technologies. Learn about the advantages of Infineon SOI gate driver: integrated bootstrap diode, Low level-shift losses, saving space and cost, and negative VS robustness.

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