IRS21094S

Überblick

600 V half-bridge gate driver IC with shutdown and programmable deadtime

600 V Half Bridge Driver IC with typical 0.29 A source and 0.6 A sink currents in 14 Lead SOIC package for IGBTs and MOSFETs. Also available in 14 Lead PDIP, 8 Lead SOIC, and 8 Lead PDIP.

For the new version with our SOI technology we recommend 2ED21094S06J, providing integrated bootstrap diode, better robustness and higher switching frequency

Zusammenfassung der Merkmale

  • Floating gate driver designed for bootstrap operation
  • Fully operational to +600 V
  • Tolerant to negative transient voltage, dV/dt immune
  • Gate drive supply range from 10 V to 20 V
  • Undervoltage lockout for both channels
  • 3.3 V, 5 V, and 15 V logic input compatible
  • Cross-conduction prevention logic
  • Matched propagation delay for both channels
  • High-side output in phase with HIN input
  • Logic and power ground +/- 5 V offset
  • Programmable up to 5 µs with one external resistor
  • Lower di/dt gate driver for better noise immunity
  • Shutdown input turns off both channels

Potentielle Zielanwendungen

Diagramme
Videos

An Introduction to Infineon Gate Drivers

What is a gate driver? Why use a gate driver? How to use a gate driver? Watch our introduction video and become a gate driver expert.

EiceDRIVER™ 2EDL Driver IC Family

EiceDRIVER™ 2EDL is a 600V half bridge gate driver IC family basing on level-shifter SOI (Silicon on Insulator) technology, which integrates low-ohmic ultrafast bootstrap diode and supports higher efficiency and smaller form factors of applications. 

Advantages of Infineon SOI Gate Driver Technology

1200 V Silicon-On-Insulators level-shift gate drivers from the market leader. This video demonstrates the advantages of products with Infineon SOI. E.g. Integrated bootstrap diode, Low level-shift losses - saving space and cost.

Trainings

How to choose gate driver for IGBT discretes and modules

With this training, you will learn how to calculate a gate resistance value for an IGBT application, how to identify suitable gate driver ICs based on peak current and power dissipation requirements, and how to fine-tune the gate resistance value in laboratory environment based on worst case conditions.

How to choose gate driver for SiC MOSFETs and SiC MOSFET modules

Silicon Carbide MOSFETs bring a lot of opportunities to power electronics. However, how to achieve sufficient system benefits by using Silicon Carbide MOSFETs with suitable gate drivers? This training helps you to learn how to calculate a reference gate resistance value for your Silicon Carbide MOSFET; how to identify suitable gate driving ICs based on peak current and power dissipation requirements; and how to fine-tune the gate resistance value in laboratory environment based on worst case conditions.

Webinar: Every Switch needs a Driver - The right Driver makes a Difference

We offer a large portfolio of level shift high voltage gate drivers – silicon-on-insulator (SOI) and junction isolated (JI) technologies. Learn about the advantages of Infineon SOI gate driver: integrated bootstrap diode, Low level-shift losses, saving space and cost, and negative VS robustness.

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