High side GaN gate driver - EiceDRIVER™

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Drive high voltage gallium nitride (GaN) HEMTs with the most robust and efficient single-channel isolated GaN EiceDRIVER™ IC on the market

CoolGaN™ e-mode HEMTs are best driven by Infineon’s GaN EiceDRIVER™ ICs, the 1EDF5673K, 1EDF5673F and 1EDS5663H. They ensure robust and highly efficient high voltage gallium nitride switch operation whilst concurrently minimizing R&D efforts and shortening time-to-market.

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Key advantages of designing with the EiceDRIVER™ GaN family

Positive and negative gate drive currents

Fast turn-on / turn-off GaN switch slew rates

Firmly holds gate voltage at zero, during off-phase

Avoids spurious GaN switch turn-on
Up to 50% lower dead time losses

Configurable and constant GaN switching slew rates, across wide range of switching frequency and duty cycle

Robust and energy efficient SMPS designs
Short time-to-market

Integrated galvanic isolation

Robust operation in hard-switching applications
Safe isolation where needed

Key features and use cases

Key features

Low ohmic outputs:
Source: 0.85Ω
Sink: 0.35Ω

Single-channel galvanic isolation:
Functional: V_IO= 1500V_DC                       V_IOWM = 510V_rms(16-pin DSO)
                          V_IOWM = 460V_rms (LGA 5x5)
  Reinforced: V_IOTM = 8000V_pk
                         (VDE 0884-10 pending)
                        V_IOWM = 1420 V_DC CMTI min:    200V/ns