1EDI3035AS The EiceDRIVER™ 1EDI3035AS is an automotive qualified single channel high voltage gate driver optimized for SiC MOSFET.
Überblick
The EiceDRIVER™ gate driver 1EDI3035AS is a high voltage SiC MOSFET driver for automotive applications, featuring 8 kV galvanic insulation with coreless transformer (CT) technology. The IC supports up to 1200 V SiC-MOSFETs and is ideally suitable to drive the IGBT + SiC HybridPACK™ Drive G2 Fusion module. The device features a powerful output stage of up to 20 A peak current required for high power switches, and DESAT protection.
Zusammenfassung der Merkmale
- For SiC MOSFET of volt. class up to 1200
- CMTI up to 150 V/ns
- 8 kV peak reinforc. insulation (DIN VDE)
- Integrated booster (up to 20 A peak)
- Integrated active Miller clamp
- 12- bit ADC
- Split outputs TON and TOFF
- DESAT protection
- Config. ext. soft turn-off functionality
- Safety inputs on both side
- ISO 26262 SEooC (saf. req. up to ASIL B)
Vorteile
- Pre-config. to drive latest SiC MOSFET
- Safety doc. aids system safety design
- Comprehensive safety features
- Supports ASIL D on system level
- AEC-Q100 qualified
- Lean packaging (DSO-20)
| Product Variant | Driver support | Short Circuit Protection | ADC | Output Stage Capability |
| IGBT | DESAT | yes | 20A | |
| IGBT | OCP | yes | 20A | |
| 1EDI3028AS | IGBT | DESAT | yes, w/o current source | 15A |
| 1EDI3035AS | SiC | DESAT | yes | 20A |
| 1EDI3038AS | SiC | DESAT | no | 15A |
Diagramme
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