6EDM2003L06-F10
Überblick
The 6EDM2003L06-F10 is a full bridge driver to control power devices like MOSFETs or IGBTs in 3-phase systems with a maximum blocking voltage of +600 V. Based on the used SOI technology there is an excellent ruggedness on transient voltages. No parasitic thyristor structures are present in the device. Hence, no parasitic latch up may occur at all temperature and voltage conditions
Zusammenfassung der Merkmale
- 600 V Thin-film-SOI-technology
- Tolerant to -Vs 50V transient spike
- Integrated bootstrap functionality
- CMOS and LSTTL compatible input
- Interlock to prevent shoot-through
- OCP and UVLO protection
- Shut down of all switches during error
- 65 µs delay for fault clear after OCP
Vorteile
- Integrated BS diode for cost savings
- 50 V -VS for increased reliability
- Integrated protection for cost saving
- UVLO protection at low supply voltage
Diagramme
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