EiceDRIVER™ 200 V Level Shift Gate Driver ICs
Now including IRS2007S 200 V half-bridge gate driver with VCC & VBS UVLO ensuring reliable start-up operation.
Including Silicon-On-Insulator (SOI) and Junction Isolation (JI) offerings. We offer Gate driver ICs tailored for low voltage (24 V, 36 V, and 48 V) and medium voltage (60 V, 80 V, 100 V, and 120 V) motor control applications.
IRS2005 replaces IRS2001;
IRS2007 can replace IRS2003;
IRS2008 can replace IRS2004.
IRS2001, IRS2003, IRS2004 are not recommended for new designs.
The 3-phase product family (6EDL04N02PR, 6ED003L02-F2) utilizes Infineon´s unique Silicon-on-Insulator (SOI) level shift technology to provide functional isolation with industry leading negative VS robustness and reduced level shift losses. A solution is also available with integrated Bootstrap Diodes (BSD) to reduce BOM cost, simplify layout, and reduce PCB size.
The IRS200x family utilizes our advanced junction isolated high-voltage IC technology to realize a compact, efficient and robust monolithic construction.
The IRS2005/7/8 family consists of four devices with VCC and VBS Under-voltage lockout (UVLO) protection. The IRS2007 and IRS2008 include integrated dead-time and shoot-through protection. The 200 V devices feature low quiescent currents. IRS2008 also features a shutdown input pin.
The IRS2005/7/8 200 V devices are offered in eight-pin DSO-8 or fourteen-pin 4 x 4 mm VQFN14 packages (IRS2005M) with various logic input options and standard pin-out configurations for high design flexibility and fast time to market. All devices are MSL2 qualified.
The 6EDxxxx three-phase devices are available in small foot print TSSOP-28 packages (6EDL04N02PR).
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In this training, we will present you an overview of the 6ED2742S01Q – a new 160 V 3-Phase Gate Driver IC.
You will learn about the inbuilt linear pre-regulator, charge pump, bootstrap diode as well as some protection features and learn, why it is suitable for battery powered applications.
You will have a glimpse of the different gate driver technologies available at Infineon and their benefits.
For a better understanding we will take a look at the optimization of external gate resistors to drive MOSFETs in a given application.
This training features how the level-shift gate drivers work, what are negative voltage transient and how they affect level-shift gate drivers. In addition you will learn about the technology difference between Junction isolation and Infineon’s Silicon-On-Insulator technology.
With this training, you will learn how to calculate a gate resistance value for an IGBT application, how to identify suitable gate driver ICs based on peak current and power dissipation requirements, and how to fine-tune the gate resistance value in laboratory environment based on worst case conditions.
We offer a large portfolio of level shift high voltage gate drivers – silicon-on-insulator (SOI) and junction isolated (JI) technologies. Learn about the advantages of Infineon SOI gate driver: integrated bootstrap diode, Low level-shift losses, saving space and cost, and negative VS robustness.