1ED3144MC12H 5.7 kV single-channel gate driver IC with reinforced isolation, 6.5 A output current, UVLO referenced to GND2, 12.5 V UVLO

Überblick

EiceDRIVER™ Compact single-channel isolated gate driver with 6.5 A sinking and 6 A sourcing peak output current in 8-pin LDSO wide body package for IGBTs, MOSFETs and SiC MOSFETs.

Zusammenfassung der Merkmale

  • For up to 2300 V IGBT, Si & SiC switches
  • 2300 V funct. offset volt. capable
  • Galv. isolated coreless transformer
  • Up to 6.5 A typical peak output current
  • 40 ns propagation delay
  • 35 V abs. max. output supply voltage
  • High CMTI > 300 kV/µs
  • Active shutdown, short circuit clamping
  • 3.3 V and 5 V input supply voltage
  • 12.5/13.6 V UVLO protection w/ hysteresis
  • UVLO referenced to GND2

Vorteile

  • 8 mm in.-to-out. creepage & clearance
  • 7 ns max part-to-part prop. delay skew
  • CTI 600 package
  • Overtemperature protection
  • IEC 60747-17 (planned), UL 1577
  • VIORM = 1767 V (peak, reinforced)
  • VISO = 6.84 kV (rms) for 1 second
  • VISO = 5.7 kV (rms) for 1 min
Diagramme
Trainings

Isolated gate drivers designed to drive the gates of power semiconductor devices. This training video will introduce the new EiceDRIVER™​ X3 Compact 1ED314x family (single-channel) as well as the 2ED314x family (dual-channel) galvanically isolated gate drivers.

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