1ED3141MC12H 5.7 kV single-channel gate driver IC with reinforced isolation, 6.5 A output current, separate outputs, 11 V UVLO

Überblick

EiceDRIVER™ Compact single-channel isolated gate driver with 6.5 A sinking and 6 A sourcing peak output current in 8-pin LDSO wide body package for IGBTs, MOSFETs and SiC MOSFETs.

Zusammenfassung der Merkmale

  • For up to 2300 V IGBT, Si & SiC switches
  • 2300 V funct. offset volt. capable
  • Galv. isolated coreless transformer
  • Up to 6.5 A typical peak output current
  • 40 ns propagation delay
  • 35 V abs. max. output supply voltage
  • High CMTI > 300 kV/µs
  • Active shutdown, short circuit clamping
  • 3.3 V and 5 V input supply voltage
  • 11/12 V UVLO protection w/ hysteresis
  • Separate outputs

Vorteile

  • 8 mm in.-to-out. creepage & clearance
  • 7 ns max part-to-part prop. delay skew
  • CTI 600 package
  • Overtemperature protection
  • IEC 60747-17 (planned), UL 1577
  • VIORM = 1767 V (peak, reinforced)
  • VISO = 6.84 kV (rms) for 1 second
  • VISO = 5.7 kV (rms) for 1 min
Diagramme
Trainings

Curious to learn more about how to make your gate driver designs simpler? Join us in this training where we will show you what to consider when selecting the gate driver for your application, go through the drive circuit step by step design, provide an outline of design considerations, while also taking the schematic and layout aspects into consideration!

Isolated gate drivers designed to drive the gates of power semiconductor devices. This training video will introduce the new EiceDRIVER™​ X3 Compact 1ED314x family (single-channel) as well as the 2ED314x family (dual-channel) galvanically isolated gate drivers.

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