1ED3010MC12I 5.7 kV (rms) single-channel gate driver IC with reinforced isolation, 6.5 A output current, Opto-emulator input, 8.5 V UVLO

Überblick

EiceDRIVER™ Lite 2300 V single-channel isolated gate driver with 6.5 A sinking and 6 A sourcing peak output current in 6-pin LDSO wide body package for Si MOSFETs.

Zusammenfassung der Merkmale

  • For up to 2300 V Si MOSFET Switches
  • 2300 V funct. offset volt. capable
  • Galv. isolated coreless transformer
  • 35 V abs. max. output supply voltage
  • 5.5 to 15 mA input diode forward current
  • 8.5 V / 9.3 V UVLO protection
  • CTI 600 Package with 8 mm creepage
  • Pin-to-pin with Opto Devices on Market
  • Opto-compatible input

Vorteile

  • Best-in-class propogation delay of 40ns
  • Strong 6.5 A / 6 A output stage
  • Best-in-class CMTI of > 300 kV/µs
  • 10 ns max part-to-part prop. delay skew
  • -18 V Max Reverse Input V
  • IEC 60747-17 (planned), UL 1577
  • VIORM = 1767 V (peak, reinforced)
  • VISO = 6.84 kV (rms) for 1 second
  • VISO = 5.7 kV (rms) for 1 min
  • UVLO options for Si, IGBT, SiC

Find our Variations for EiceDRIVER™ compact 1ED301x family (X3 Lite family)

Part Number UVLO Target switch
1ED3010MC12I 8.5 V / 9.3 V Si MOSFET
1ED3011MC12I 11.0 V / 12.0 V IGBT
1ED3012MC12I 12.5 V / 13.6 V SIC MOSFET
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