1ED2147S65F | 650 V high-side gate driver IC with over current protection (OCP), multi-function RCIN/Fault/Enable (RFE) and integrated bootstrap diode (BSD)

Überblick

EiceDRIVER™ 650 V high side single channel gate driver IC with a typical 4 A source and 4 A sink current in DSO-8 package for IGBTs, MOSFETs and SiC MOSFETs.

Zusammenfassung der Merkmale

Infineon thin-film-SOI-technology
Maximum blocking voltage +650 V
Output source/sink current +4 A/ -4 A
Maximum supply voltage of 25 V
Integrated Bootstrap Diode
Negative VS transient immunity of 100 V
Over current & under voltage protection
Multi-function RFE pin functionality
Less than 100 ns propagation delay
DSO-8 package
RoHS compliant

Vorteile

Excellent ruggedness and noise immunity
High current output stage
Power switch protection integrated
Fault feedback provided

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1ED2147S65F 650 V high-side gate driver IC with over current protection (OCP), multi-function RCIN/Fault/Enable (RFE) and integrated bootstrap diode (BSD)