Integrated Power Stage (GaN)
Infineon’s CoolGaN™ Integrated Power Stage (IPS) leverages the markets most reliable GaN and driver technology, uniting ultimate efficiency and reliability with ease-of-use. CoolGaN™ IPS is pairing the CoolGaN™ normally-off enhancement mode GaN switches with dedicated integrated EiceDRIVER™ gate driver into thermally enhanced QFN packages. This integration allows designers to save more PCB space, on top of passive components size reduction, to achieve a smaller form factor design in a shorter time.
The CoolGaN™ IPS 600V family today, includes various configurations such as half-bridge utilizing two CoolGaN™ GaN transistors and EiceDRIVER™ driver packaged in a 8x8mm QFN-28 or 6x8mm QFN-26, as well as single-channel with EiceDRIVER™ driver configuration in a compact 8x8mm QFN-21 package.
CoolGaN™ has an advanced breakdown field of 10x and an electron mobility of 2x higher compared to silicon devices. The key for the high frequency operation capability of CoolGaN™ lies in a 10x lower output- and gate charge, compared to silicon-based devices and a reverse recovery charge of virtually zero.
The faster switching capability of CoolGaN™ and the ease-of-use thanks to integration, brings ultimate efficiency and reliability to switch mode power supply applications such as USB-PD chargers and adapters, wall plugs and ultrathin TV power supply.