IGT60R190D1S

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Gallium nitride CoolGaN™ 600V enhancement mode power transistor IGT60R190D1S for ultimate efficiency and reliability

IGT60R190D1S CoolGaN™ 600V e-mode power transistor offers fast turn-on and turn-off speed, minimum switching losses and enables simple half bridge topologies with highest efficiency.

The gallium nitride CoolGaN™ 600V series is qualified according to a comprehensive GaN-tailored qualification well beyond existing standards. It addresses datacom and server SMPS, telecom as well as adapter, charger, wireless charging and numerous other applications that demand highest efficiency or power density.

Features

  • Enhancement mode transistor – normally OFF switch
  • Ultra fast switching
  • No reverse-recovery charge
  • Capable of reverse conduction
  • Low gate charge, low output charge
  • Superior commutation ruggedness
  • Qualified for standard grade applications according to JEDEC

Benefits

  • Improves system efficiency
  • Improves power density
  • Enables higher operating frequency
  • System cost reduction savings
  • Reduces EMI

Target applications

Consumer SMPS and high density chargers based on the half-bridge topology

Please be aware of the errata sheet.

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