GaN HEMT – Gallium Nitride Transistor

• 60 V - 700 V GaN transistors
• Top and bottom side cooled packages
• Ultrafast switching-speed
• Superior FOMs
• Continous current: 4 A - 100 A
• R_DS(on)typ. from 1.4 mΩ to 450 mΩ
• Enhancement mode (e-mode)
• No reverse-recovery charge
• Ultra-low gate and output charge
• Adapters and chargers

With their superior switching speed, GaN transistors enable high power density, reduce energy losses, and increase efficiency in a wide range of applications. This means that designers can create smaller, lighter, and more compact systems delivering high performance.

Compared to traditional Si switches, GaN transistors have higher thermal conductivity, allowing for better heat dissipation and improved reliability. CoolGaN™ Transistors are designed to be robust, withstanding high voltage spikes and ensuring a longer lifespan.

The portfolio in the 60 V to 200 V range housed in the PQFN 3x3 and PQFN 3x5 packages has a moisture sensitivity level (MSL) rating of 1, which makes them suitable for standard storage and handling conditions.

In the high-voltage arena (≥600 V), we offer a very broad variety of SMD packages, ranging from TOLL, TOLT, ThinPAK 5x6, DFN 8x8, to top- and bottom-side cooled DSO. These packages cater to diverse design requirements and offer a perfect blend of compact size, improved thermal performance, cost-effectiveness, and design flexibility.

The right gate driver IC is inevitable, as it can help designers to achieve the best performance while minimizing costs. Our broad portfolio comprises single- and dual-channel isolated and non-isolated gate drivers tailor-made for GaN. Therein, also a family of single-channel non-isolated devices with truly differential inputs, namely, the EiceDRIVER™ 1EDN TDI family.

Check out our EiceDRIVER™ portfolio, and learn about the gate driver ICs fitting your GaN designs.

Did you know that terms like GaN fets, GaN MOSFETs, GaN transistors and GaN HEMTs are all interchangeable terms with slight technical variations for our CoolGaN™ Transistors? 

When we are designing a switching mode power supply, PCB layout is always an important topic. Solving interference problems by slowing down the switching speed of power devices is no longer a solution. Join us to see how to optimize PCB layouts.

This talk will focus on two board design platforms that demonstrate the scalability of GaN power solutions in different applications. For server DC-DC converters, you will see 4- and 6-phase IBC buck converters with 1.6 kW and 2.4 kW output power respectively, each achieving ~97% peak efficiency. For LV FOC motor drives, you will see a “matchbox-sized” drive with 1 kW output power using 2 paralleled HEMTs for drones, servos, and e-bikes; and a motor drive with 8 kW output power using 8 paralleled HEMTs for e-scooters and power tools. The recommendations for scaling the two different designs are based on a holistic system approach, targeting the highest efficiency and power density to meet customer needs.

• Get to know the features of CoolGaN™ half-bridge IPS and the benefits it brings for charger/adapter applications
• Identify the topologies in which a CoolGaN™ half-bridge IPS can be used to build a charger/adapter
• Be acquainted with a use case for CoolGaN™ half-bridge IPS

Watch eLearning

This training provides an insight about the system benefits of wide-bandgap devices, which will conquer market share in areas where power density, efficiency and/or battery range are decisive. The training focuses on two applications, mobile chargers and on-board chargers, and will talk about the challenges faced by the solutions today and how SiC and GaN provide next levels of performance.

Understand why to use WBG switches for bi-directional converters, the topologies used and how they function.

Watch eLearning

By watching this eLearning you will:

• Understand package inductance
• Know why wide bandgap transistors are more susceptible to package inductance, and
• Identify which Infineon package types have lower inductance

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Click here to watch eLearning in Chinese

In this eLearning you will get an overview of the main features and benefits of Infineon’s 600 V CoolGaN™ transistors.

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In this eLearning you will learn about the similarities and differences of GaN power transistors compared to their silicon counterparts.

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In this training, we will show you Infineon’s CoolGaN™ - GaN HEMTs methodology.

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CoolGaN™ - Gallium Nitride Transistors are the power devices with the best performance available on the market. Get to know more about this technology.

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Do you want to learn about switched mode power supplies (SMPS), but have little to no background in electrical engineering? Then watch this training series!

It will take you on a journey: You will start with the basics of electrical engineering and learn the principles of semiconductors so you are fully prepared to dive into the world of SMPS.

Part 1 - Electrical engineering fundamentals (Chinese version)
Part 2 - Principles of semiconductors (Chinese version)
Part 3 - Introduction to SMPS (Chinese version)
Part 4 - SMPS topologies (Chinese version)