GS66516B-MR Mini reel option of 650 V CoolGaN™ e-mode power transistor for ultimate efficiency and reliability

Überblick

The GS66516B-MR is an enhancement mode GaN-on-Silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency.  The GS66516B-MR is a bottom-side cooled transistor in a GaNPX® package with very low junction-to-case thermal resistance for high power applications such as ACDC and DCDC converters, renewable energy, on-board and off-board EV chargers, and industrial power supplies.

Zusammenfassung der Merkmale

  • E-mode HEMT – normally OFF
  • Ultrafast switching
  • No reverse-recovery charge
  • Capable of reverse conduction
  • Low gate charge, low output charge
  • Superior commutation ruggedness
  • JEDEC qualified (JESD47, JESD22)
  • Bottom-side cooled
  • Zero reverse recovery loss
  • Fast, controllable fall and rise times
  • RoHS 3(6+4) compliant

Vorteile

  • Improves system efficiency
  • Improves power density
  • Reduces system weight
  • Enables higher operating frequency
  • System cost reduction savings
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