Infineon's CoolSiC™ Schottky diodes 650V deliver the best price-performance and customer value in the market, leveraging advanced silicon carbide production facilities, a solid track record, the upmost quality and a very granular and complete combined G5/G6 portfolio.

With more compact designs and thin wafer technology the CoolSiC™ Schottky diodes generation 5 complement our 650V CoolMOS™ superjunction MOSFET families, satisfying application requirements of 650V solutions. The CoolSiC™ Schottky diodes G5 convince with better efficiency compared to Silicon diode alternatives.

The latest product family of CoolSiC™ Schottky diode 650V G6, successor of generation 5, comes with improved system efficiency complementing Infineon’s 600V and 650V CoolMOS™ 7 superjunction MOSFET families.

The CoolSiC™ Schottky diode 650V G6 is the leading edge technology from Infineon for the SiC Schottky barrier diodes, fully leveraging all advantages of SiC over silicon. An Infineon proprietary innovative soldering process is combined with a more compact design, thin-wafer technology and a novel Schottky metal system. The result is a family of products with improved efficiency over all load conditions, resulting from a best-in-class figure of merit (Q_c x V_F). The CoolSiC™ G6 diodes complement Infineon’s 600V and 650V CoolMOS™ 7 families, meeting the most stringent application requirements in this voltage range.