DDB2U20N12W1RF_B11 1200 V, 20 A diodes IGBT module
Überblick
EasyBRIDGE 1 1200 V, 20 A diode bridge module with CoolSiC™ Schottky diode, PressFIT contact technology and NTC.
Zusammenfassung der Merkmale
- Uses best in class SiC Schottky Diode Gen 5 technology
- Optimal pin out
- PressFIT technology
- Broadest Easy portfolio
Vorteile
- latest SiC diode generation to enable efficient DCDC secondary systems
- Power density and compact design
- Optimized performance for fast DC charging
- Easy design-in & high degree of freedom for the inverter designer
Diagramme
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