CY15B104Q-SXI High-Density 4 Mbit SPI F-RAM with Industrial Qualification and Wide Operating Range
Überblick
The CY15B104Q-SXI, a 4-Mbit F-RAM, ensures 151-year data retention, rapid bus-speed write operations, and exceptional write endurance. It serves as a reliable solution for nonvolatile memory applications, outperforming traditional serial flash and EEPROM.
Zusammenfassung der Merkmale
- 4-Mbit F-RAM logically organized as 512 K × 8
- High-endurance 100 trillion (1014) read/writes
- 151-year data retention
- NoDelay™ writes
- Advanced high-reliability ferroelectric process
- Very fast serial peripheral interface (SPI)
- Sophisticated write protection scheme
- Manufacturer ID and Product ID
- Low power consumption
- Low-voltage operation: VDD = 2.0 V to 3.6 V
- Industrial temperature: –40 °C to +85 °C
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