RIC7S113A4SCB

Rad hard high and low side gate driver - MIL-PRF-38535 Level B Screening

RIC7S113 is a rad hard high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. It is intended for harsh radiation environments such as space, with electrical parameters specified pre and post-irradiation up to 100 krad(Si) and single effect effects (SEE) characterized up to a linear energy transfer (LET) of 81.9 MeV·cm2/mg.

Summary of features

• Independent high and low side gate driver
• Independent bias supply for logic and power with ±5V offset
• Wide bias supply voltage range
• Undervoltage lockout for both channels
• CMOS Schmitt trigger inputs with internal pull-down resistor
• Integrated level shift for high side drive
• Cycle by cycle edge triggered shutdown logic pin
• Matched propagation delay for both channels
• Hermetically sealed package
• Lightweight</li><li>Total ionizing dose (TID) hardness
• High dose rate (50-300 rad(Si)/s) of 100 krad(Si)
• Single event effect (SEE) hardness
• Safe operating area (SOA) defined for no SEB, SEGR up to LET of 81.9 MeV·cm2/mg
• SET characterized up to LET of 81.9 MeV·cm2/mg

Benefits

• Reduce size and weight by eliminating bulky gate drive transformers
• Increase reliability over opto-coupler based gate driver designs
• 50 V/ns transient immunity for robust high-speed switching

Potential applications

• Satellite bus and payload
• Power conditioning unitP
• Power distribution unit
• DC-DC converter
• Motor drive

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