EVAL_BUP_06N_1

Überblick

Open-loop half-bridge evaluation board of 60 V radiation tolerant BUP06CN035L-01 N-channel MOSFETs driven by high and low side 2ED21844S06J silicon-on-insulator gate driver. 

Zusammenfassung der Merkmale

  • Half-bridge power stage populated with two 60 V/35 A RT Si MOSFETs
  • Populated with a single PWM input with the 2ED21844S06J half-bridge gate driver IC
  • Drop-in support for dual input PWM 2ED21824S06J half-bridge gate driver IC
  • Onboard tunable resistor network to achieve a range of dead times for either 2ED21844S06J or 2ED21824S06J
  • Flexible open-loop power stage configurable for a variety of operating conditions
  • PCB layout supports TO-263 (D2PAK) MOSFET packages

Potentielle Zielanwendungen

  • Satellite Bus and Payload
  • Power Conditioning Unit
  • Power Distribution Unit
  • DC-DC Converter
  • Motor Drive
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