EVAL-2ED21814 Evaluation Board for 2ED21814S06F, 650 V, 2.5 A half-bridge gate driver with integrated bootstrap diode
Überblick
The EVAL-2ED21814 comes with the gate driver IC, 2ED21814S06J and two MOSFETs, IPP60R280P7, in half bridge configuration. This board is designed to test basic functionalities and highlight features of the Infineon silicon-on-insulator (SOI) gate driver. The user can test PWM input-output performance, check propagation delay, current capability, and high switching frequency performance. The board can be used to do a double pulse test.
Zusammenfassung der Merkmale
- Operating voltages up to + 650 V
- Using Infineon SOI-technology
- Negative VS transient immunity of 100 V
- Integrated low ohmic bootstrap diode
- Designed for bootstrap operation
- Maximum supply voltage of 25 V
- Under voltage lockout (UVLO)
- 200 ns propagation delay
- Logic operational up to –11 V on VS Pin
- Separate logic and power ground
Vorteile
- Reduced BOM cost & saves space
- 50% lower level-shift losses
- Excellent ruggedness & noise immunity
- Suitable for high current power devices
- For high frequency applications
Diagramme
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