BGSX22GN10 RF MOS switch is specifically designed for dual antenna applications.
This single supply chip integrates on-chip CMOS logic driven by a simple, single-pin CMOS or TTL compatible
control input signal. The 0.1 dB compression point exceeds the switch’s maximum input power level, resulting in
linear performance at all signal levels. The RF switch has a very low insertion loss of 0.35 dB in the 1 GHz and 0.60
dB in the 2.5 GHz range.
Zusammenfassung der Merkmale
- Antenna cross switch with power handling capability of up to 35 dBm
- Low insertion loss
- Low harmonic generation
- High port-to-port-isolation
- 0.1 to 2.7 GHz coverage
- High ESD robustness
- On-chip control logic