Rapid 1 and 2 power silicon diodes complement the existing high power 600V/650V diodes, filling the gap between the SiC diodes and emitter-controlled diodes.
650V Rapid 1 Diode
Infineon`s Rapid 1 diode family, with 1.35V temperature-stable forward voltage (V F), ensures the lowest conduction losses and by means of soft recovery keeps EMI emissions to a minimum.
650V Rapid 2 Diode
The Rapid 2 diode family is designed for applications switching between 40 kHz and 100 kHz by offering low reverse recovery charge (Q rr) and time (t rr) to minimize the reverse conduction times attributed to the power switch turn-on losses and thus providing maximum efficiency.