Home 产品分类 射频与无线控制 高可靠性分立式半导体 HiRel Silicon Bipolar Transistor technology BFY182 (P) BFY182 (P) 综述 HiRel Microwave Transistor 特征描述 HiRel Discrete and Microwave Semiconductor For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA. Hermetically sealed microwave package fT= 8 GHz F = 2.4 dB at 2 GHz Type Variant No. 04 潜在应用 Quality level for Engineering Models 指标参数 文件 订单 设计支持 视频 合作伙伴 培训 包装 支持 联系