Highlights

CoolSiC™ discretes for on-board chargers and auxiliaries: Get to know the automotive CoolSiC™ MOSFET and Schottky diodes for on-board charger applications and auxiliaries. CoolSiC™ power discretes enable higher efficiency levels, which translates into better power density. Benefits include:

• Operation at >600 V battery voltage
• Three-phase, non-stacked systems
• Bi-directionality

CoolSiC™ main inverter: HybridPACK™ Drive (FS03MR12A6MA1B) with CoolSiC™ power modules enable:

• Scalable output power on the same footprint (HybridPACK™ Drive)
• Higher inverter efficiency, which enables a smaller battery and higher power density
• Operation at >600 V battery voltage

CoolSiC™

Automotive IGBT Modules

Take your system design to the next level with Infineon's CoolGaN™ e-mode HEMTS and dedicated GaN EiceDRIVER™ ICs. Delivering outstanding reliability, high performance and robustness, our GaN solutions speed up the design of next-generation server, data center, telecom, wireless charging, adapter and charger.

Gallium Nitride (GaN)

Extending its large portfolio of high voltage devices, the new package XHP™ 3 will be showcased, a flexible IGBT module platform for high-power applications in the voltage range from 3,3 kV up to 6,5 kV. The module allows for scalable designs with best-in-class reliability and highest power density. Due to its symmetrical design with low stray inductance it offers significantly improved switching behavior: a solution for demanding applications such as traction and commercial, construction and agricultural vehicles as well as medium-voltage drives.

XHP™

High-power industrial fan using CIPOS™ Maxi: This 2 kW, high-power industrial fan from ebm-papst uses IM818-MCC CIPOS™ Maxi to achieve the highest power density and reliability levels. The ultra-compact size and high degree of integration allow you to maximize the airflow for the available fan surface.    

1.6 kW industrial pump: This pump uses an iMOTION™ controller and CIPOS™ IPM with a PFC+Inverter to achieve a highly compact and efficient design. Secure connectivity through EtherCAT is provided with XMC4800, and OPTIGA™ Trust for secure communication in an Industry 4.0 environment.

Digital Motor Controller (iMOTION™)

Intelligent Power Modules (IPM)

OPTIGA™ embedded security solutions

XMC4800

Infineon’s new 1200 V TRENCHSTOP™ IGBT7 and EC7 diode technology is based on the latest micro-pattern trench technology, which significantly reduces losses and offers a high level of control. The chip is specially optimized for industrial drive applications and delivers much lower static losses, higher power density levels and softer switching. Additionally, by raising the allowed maximum operation temperature up to 175 °C in the power module, an increase of the output current of up to 40 percent can be obtained.

TRENCHSTOP™ IGBT7

2 kW, single-burn induction cooker demo board that uses IEWS20R5135IPB - Infineon’s most efficient RC-IGBT technology, co-packed with a protective driver - to enhance performance and reliability. This innovative concept enables the board area and component count to be reduced, which, in turn, reduces design effort.

IGBT Protected Series

Infineon provides a leading, general purpose gate driver portfolio for the widest range of applications. The portfolio enables all kinds of power switches to be driven, from MOSFETs through IGBTs to SiC MOSFETs.

Infineon’s high-performance isolated EiceDRIVER™ gate driver ICs complement our one-stop shop offering for EV charging solutions. Our isolated gate drivers are key for enabling EV charging solutions that meet the highest energy efficiency requirements.

The new generation level-shift gate drivers, based on Infineon Silicon On Insulator technology, provides superior ruggedness and low switching losses. These devices also improve the end-product bill of materials.

Half-bridge buck converter board using the EiceDRIVER™ 1EDN TDI: This board impresses Infineon’s EiceDRIVER™ 1EDN TDI family of single-channel low-side gate drivers with innovative truly differential inputs (TDI) concept, demonstrating the ground bounce robustness of this driver IC. Visitors can explore how 1EDN TDI solves ground shift, allows separate high- and low-side driving for layout flexibility and cost reduction.

Infineon EiceDRIVER™ gate driver ICs - Selection guide 2019

The new TLI4971 current sensor is ideal for measuring currents up to 120 A with very low power losses thanks to its magnetic measurement principle and optimized package design. It is the perfect fit for space-critical applications such as robot arms.

The differential measurement principle also enables the sensor to measure current very accurately without special shielding against stray fields. Target applications include industrial drives up to 50 kW, PV inverters, main switches and white goods.

XENSIV™

Recent Market News

Infineon presents its high-voltage, 6.6 kW, bi-direction solution for on-board chargers and DC DC applications. This solution is designed to keep system costs low and ensure high productivity for high volumes. Our on-board charger demo features fast-switching automotive IGBT discretes (AIKW40N65F5) which are capable of very high frequencies, deliver best-in-class efficiency levels (conduction and switching) and are also manufactured in 300 mm process technology.

Discover our latest automotive CoolSiC™ Schottky diodes (AIDW40S65C5) with silicon carbide technology and a through-hole package.

Automotive IGBT Discretes

CoolSiC™ Schottky Diode

Scalable, flexible inverter modules for various performance ranges. The FS950R08A6P2B power module offers the highest performance, with an increase by around 15 percent compared with the standard HybridPACK™ Drive PinFin. The FS770R08A6P2B wave variant offers the best cost-performance ratio and has a ribbon-bon backside. The flat baseplate module FS660R08A6P2B has the lowest performance and completes the Drive family portfolio, closing the performance gap relative to the HybridPACK™ DC6.

Automotive IGBT Modules

Compact, double-sided cooled power module with high temperature capabilities (175°C T_vj) featuring Infineon’s benchmark EDT2 technology and on-chip sensors. This flexible solution enables the highest main inverter power densities (up to 80 kW). The evaluation kit HybridKIT™ DSC can be used to reduce system development time and effort.

Automotive IGBT Modules

sTOLL is Infineon’s high-performance leadless package in 7x8 mm² with OptiMOS™ 5 40 V for next-generation power MOSFET designs. The sTOLL power package is registered with JEDEC under the name MO-319A and listed with IEC under the name PG-HSOF-5. This power package supports high current capabilities of up to 250 A on a very small footprint.

This outpaces the standard 180 A of D²PAK (150 mm²) and the 100 A of DPAK (65 mm²). The sTOLL power package family supersedes traditional SMD packages like D²PAK (TO263) and DPAK (TO252) to provide higher current capabilities in a smaller form factor without sacrificing thermal performance. Furthermore, sTOLL is a leadless package and therefore minimizes stray inductances and package resistance while significantly improving on the switching behavior of the traditional DPAK/D²PAK packages.

sTOLL – new 7x8 mm² power MOS package

Power Stacks with power semiconductors are used in a wide range of applications scaling from a few kilowatts up to several megawatts. With a choice of more than 25,000 assembly variants, we work with you to implement the Power Stack that best suits your requirements. For drive inverters with a 690 V line voltage, we offer a customizable modular Power Stack based on the KM20 Compact Block concept with one MIPAQ Pro™ and two 60 mm Eco Blocks.

For medium-voltage transformer TAP switches, you can use a customizable modular thyristor switch based on the K73S Tower Block concept with two T2563N80TOH light-triggered thyristors. The four-point clamping system ensures even pressure distribution. Tailored to your design needs, our Eco Block, Power Block and Prime Block modules offer the most competitive solutions for your individual requirements.

Power Stacks

High Power Diodes & Thyristors

MIPAQ™ Pro