碳化硅 (SiC)

英飞凌CoolSiC™半导体解决方案是迈向节能世界的一大步。将革命性的SiC技术与我们充足的的系统知识、一流的封装和卓越的生产工艺相结合，使您能够开发先进的高系统性价比新产品。

碳化硅(SiC)器件属于所谓的宽禁带半导体组别。与常用硅(Si)器件相比，它们为高压功率半导体提供了许多有吸引力的特性。特别是，碳化硅具备更高的击穿电场强度和导热率，可以制造出远超相应硅基的器件。这样您就可以在设计中实现原本无法企及的效率水平。

SiC论坛为您提供了交流想法并分享经验的平台，在这里我们的SiC器件及应用专家为您提供有关CoolSiC™ MOSFET模块和单管的建议。

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The use of SiC based power semiconductor solutions has shown a huge increase over the last years, it is a revolution to rely on. Driving forces behind this market development are the following trends: energy saving, size reduction, system integration and improved reliability.

The combination of a fast silicon based switch with a SiC diode – is often termed a “hybrid” solution. In recent years Infineon has manufactured several millions of hybrid modules and has seen them installed in various customer products.

Over the next few years, SiC solutions will expand into other application fields such as industrial or traction drives. The reasons for this are the market forces pushing for loss reduction, not only for the sake of improved efficiency but also for smaller packages – resulting from reduced heat sink requirements. As shown in figure above, SiC is already being used for high end and niche solutions. Today’s designs use these benefits to reduce system cost in specific application areas.