FF55MR12W1M1H_B70 1200 V CoolSiC™ MOSFET半桥模块
1200 V和55 mΩ EasyDUAL™ 1B CoolSiC™ MOSFET半桥模块，采用压接技术和氮化铝陶瓷基板。
特征描述
- 宽反向安全工作区
- 超低杂散电感
- 宽栅极驱动器电压范围
- 压接式引脚
- 高热导率
优势
- 最高栅极-源极间电压扩展至+23 V和-10 V
- 过载条件下的工作结温Tvjop高达175°C
- 最优性价比，帮助降低系统成本
- 实现高开关频率，通过优化降低了冷却需求
This training covers the properties of Silicon Carbide which change the way how an inverter is designed compared to Si-chips. With that in mind, we explain SiC specific degradation mechanisms and how to ensure that SiC devices survive in the application, considering these special failure modes, by applying the reliability tests Infineon developed. These are internally mandatory for SiC device qualifications to ensure better quality, safety, and reliable device performance for years.
With the growing market of electrical vehicles, the industry has put forward more requirements for the performance of charging piles.
This e-learning will show you that the emergence of CoolSiC™ MOSFETs has improved the charging pile industry to make the EV charger smaller, faster and with higher efficiency.
This training will introduce you to how the CoolSiC™ will help to design the next generation of servo drives.
With this training you will learn how to calculate a reference gate resistance value for your Silicon Carbide MOSFET, how to identify suitable gate driving ICs based on peak current and power dissipation requirements and to fine-tune the gate resistance value in laboratory environment based on worst case conditions.
