FF4MR20KM1H_S CoolSiC™ MOSFET half bridge module 2000 V
综述
62 mm CoolSiC™ MOSFET half bridge module 2000 V, 3.5 mΩ G1 in the well known 62mm housing design with M1H chip technology and common source topology.
特征描述
- High current density
- Low switching losses
- Superior gate oxide reliability
- Robust integrated body diode
- High cosmic ray robustness
- High speed switching module
- Symmetrical module design
- Standard construction technique
优势
- Minimizes cooling efforts
- Reduction in volume and size
- Reduced system costs
- Improved chip performance
- For solid state curcuit breaker designs
图表
支持
