FF17MR12W1M1HP_B11 集成 CoolSiC™ MOSFET 的半桥 1200V 模块
EasyDUAL™ 1B 1200 V, 33 mΩ 半桥模块采用了第一代增强型CoolSiC™ MOSFET 、集成式NTC 温度传感器、预涂热界面材料和 PressFIT 压接技术。
特征描述
- 12 毫米高的同类最佳封装
- 将领先宽禁带材料与 Easy 模块封装相结合
- 模块杂散电感极低
- 较宽的反偏安全工作区 (RBSOA)
- 采用第一代增强型沟槽技术的1200 V CoolSiC™ MOSFET
- 建议栅极驱动电压窗口增大:从 +15 扩展至 +18 V,从 0 V 扩展至 -5 V
- 扩展的最大栅-源电压:+23 V 和 -10 V
- 过载条件下工作结温 Tvjop 高达 175°C
- PressFIT 引脚
- 集成 NTC 温度传感器
- 热界面材料
优势
- 出色的模块效率,实现系统成本优势
- 提高系统效率,降低冷却需求
- 支持更高频率,提高功率密度
- 最佳性价比,有助降低系统成本
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