DF17MR12W1M1HF_B86

综述

EasyPACK™ 1B 1200 V, 33 mΩ and 1 MPPTs booster module with CoolSiC™ MOSFET enhanced generation 1, NTC and PressFIT Contact Technology.

特征描述

  •  Easy family with 12mm height
  • enhanced generation 1 trench technology
  • Very low module stray inductance
  • Gate-source voltages of +23 V and -10 V
  • Very low stray inductance
  • Overload capabilities up to 175°C
  • PressFIT pins

优势

  • Easy to design
  • Highest power density by lowest RDS
  • Outstanding module efficiency
  • A low FIT rate for cosmic ray induced fails
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