DF11MR12W1M1_B11

综述

升压器 1200 V CoolSiC™ MOSFET 模块

简洁的 1B 1200 V/11 mΩ 升压器模块搭配 CoolSiC™ MOSFET、NTC 温度检测和 PressFIT 压接技术，在升压级采用增强额定电流 CoolSiC™ 肖特基二极管，支持 PV 板提供更高的输入电流。

特征描述:

  • 高电流密度
  • 同类产品中极低的开关和导通损耗
  • 低电感设计
  • 集成 温度检测NTC 温度传感器
  • PressFIT 压接技术
  • 模块符合 RoHS

优势:

  • 效率极高，冷却要求更低
  • 更高的频率运行
  • 增加功率密度
  • 优化客户的开发周期，降低成本

目标应用:

图表
视频

EV charging - General Information

3:03

The Future of EV Charging – Infineon’s One-Stop-Shop, See how Infineon as the market leader and global frontrunner in power electronics, enable you to bring energy-efficient DC EV charger designs to life. With our highly-efficient components and in-depth technical support.

EV charging - Detailed Information

3:37

The Future of EV Charging – Infineon’s One-Stop-Shop, See how we as the market leader and global frontrunner in power electronics, enable you to bring energy-efficient DC EV charger designs to life. With our highly-efficient components and in-depth technical support.

CoolSiC™ - Revolution to rely on

2:24

Infineon CoolSiC™ semiconductor solutions are the next step towards an energy-smart world. Combining revolutionary SiC technology with extensive system understanding, best-in-class packaging and manufacturing excellence, Infineon CoolSiC™ enables you to develop radical new product designs with best system cost-performance ratio.

培训
29:16

How to choose gate driver for SiC MOSFETs and SiC MOSFET modules

Silicon Carbide MOSFETs bring a lot of opportunities to power electronics. However, how to achieve sufficient system benefits by using Silicon Carbide MOSFETs with suitable gate drivers? This training helps you to learn how to calculate a reference gate resistance value for your Silicon Carbide MOSFET; how to identify suitable gate driving ICs based on peak current and power dissipation requirements; and how to fine-tune the gate resistance value in laboratory environment based on worst case conditions.

支持