IMSQ120R053M2HH CoolSiC™ MOSFET discrete 1200 V in top-side cooled Q-DPAK dual half-bridge package
CoolSiC™ MOSFET discrete 1200 V, 53 mΩ G2 in a top-side cooled Q-DPAK dual half-bridge package specifically designed for wide use in industrial application, including, industrial drives, EV charging solutions, solar systems and uninterruptible power supply.
The Q-DPAK provides customers with a reduced system cost by enabling easier assembly with outstanding thermal performance. Compared to bottom-side cooled solutions, top-side cooled devices enable a more optimized PCB layout, which in turn reduces the effects of parasitic components and stray inductances, while also providing enhanced thermal management capabilities.
The top-side cooled Q-DPAK Dual half-bridge package is introducing a new era in cooling, energy efficiency, design flexibility and performance.
特征描述
- VDSS = 1200 V at Tvj = 25°C
- IDDC = 32 A at TC = 100°C
- RDS(on) = 53 mΩ, VGS = 18 V, Tvj = 25°C
- Very low switching losses
- Overload operation up to Tvj = 200°C
- Short circuit withstand time 2 µs
- Benchmark gate threshold voltage 4.2 V
- Robust against parasitic turn on
- Robust body diode for hard commutation
- .XT interconnection technology
优势
- Higher power density
- Enabling automated assembly
- Less complex designs needed
- Outstanding thermal performance vs BSC
- Improve system power losses
- Enable a VRMS of 950 V with PD 2
- Lower TCO cost or BOM cost
This training provides an overview of Infineon's Q-DPAK top-side cooling portfolio, including design considerations and thermal interface options.
