碳化硅 MOSFET 单管

Our CoolSiC™ MOSFETs are built on a state-of-the-art trench semiconductor process optimized to allow for both lowest losses in the application and highest reliability in operation. The discrete CoolSiC™ portfolio in TO- and SMD-housings comes in 650 V, 1200 V and 1700 V voltages classes, with on-resistance ratings from 27 mΩ up to 1000 mΩ.  CoolSiC™ trench technology enables a flexible parameter-set, which is used for implementation of application-specific features in respective product portfolios, e.g.: gate-source voltages, avalanche specification, short-circuit capability or internal body diode rated for hard commutation.

CoolSiC™ MOSFETs in discrete packages are ideally suited for both hard- and resonant-switching topologies like power factor correction (PFC) circuits, bi-directional topologies and DC-DC converters or DC-AC inverters. An excellent immunity against unwanted parasitic turn-on effects creates a benchmark in low dynamic loss, even at zero volt turn-off voltage in bridge topologies. Our TO- and SMD offering comes also with Kelvin-source pins for optimized switching performance.

We complete the SiC discrete offering with a range of selected driver IC products fulfilling the needs of the ultrafast SiC MOSFET switching feature. Together, CoolSiC™ MOSFETs and EiceDRIVER™ gate driver ICs leverage the advantage of SiC technology: improved efficiency, space and weight savings, part count reduction, enhanced system reliability.

CoolSiC™ MOSFET拥有快速内部续流二极管，因而可在无需额外二极管的情况下实现硬开关。由于是单极性，尤其在部分负载条件下，MOSFET具有与温度无关的极低开关损耗及导通损耗。

英飞凌独特的1200 V和650 V CoolSiC™ MOSFET，非常适合LLC和ZVS等硬开关和谐振开关拓扑，可以像IGBT或CoolMOS™一样选用标准驱动。得益于先进的沟槽设计，最优的开关损耗和导通损耗，最高的跨导电平（增益），V_th = 4 V的阈值电压，以及卓越的短路能力，这些器件具有绝佳的门极氧化层可靠性。

SiC论坛为您提供了交流想法并分享经验的平台，在这里我们的SiC器件及应用专家为您提供有关CoolSiC™ MOSFET模块和单管的建议。

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CoolSiC™ MOSFET等超快速开关器件的完美使用需要性能优异的门极驱动。因此，建议选择基于英飞凌无铁芯变压器技术的隔离驱动EiceDRIVER™芯片

> 进一步了解适用于SiC MOSFET的EiceDRIVER™芯片