IRF9333
综述
-30V 单个 P 通道 HEXFET Power MOSFET, 采用 SO-8 封装
优势
- Optimized for broadest availability from distribution partners
- Optimized for 4.5V gate-drive voltage(called Logic level), capable of being driven at 2.5V gate-drive voltage (called Super Logic level)
- Reduced design complexity in high-side configuration (vs N-channel device)
- Easier interface to Microcontroller (vs N-channel device)
支持