PQFN 3.3x3.3

综述

OptiMOS™ and StrongIRFET™ low-voltage power MOSFET in PQFN 3.3x3.3 package

The PQFN 3.3x3.3 package offers high efficiency and power management in a compact space saving package. Infineon is thriving to improve the product with the system in mind, by combining leading-edge silicon technology with ever improving packaging innovation. This family is ideal for synchronous rectification, SMPS, telecom, server and portable charger applications requiring enhanced efficiency and power density

The portfolio is composed of single and dual, N and P-channel MOSFETs with voltages ranging from -30 V to 250 V. Special features include monolithically integrated Schottky-like diodes, optimization for e-fuse and Oring applications.

The portfolio is available in StrongIRFET™ and OptiMOS™ MOSFET technologies, offering customers optimized solutions for both general purpose and high performance applications. The family offers flexibility in gate drive, with 4.5 V and 2.5 V gate drive capability.

PQFN 3.3x3.3
Key features Key benefits Potential applications
  • Low RDS(on)
  • Small outline package
  • Low gate charge
  • Super Logic Level (2.5 V) and Logic Level (4.5 V) availability
  • High efficiency
  • Board space reduction
  • Reduction in switching and driver losses
  • Gate drive flexibility
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