ISG0616N10NM5HSC
综述
OptiMOS™ 5 dual n-channel 100 V MOSFETs in scalable power block with dual-side cooling capability
Dual N-channel MOSFETs in PQFN 6.3x6.0 features low RDS(on) of 4.0 mΩ each with Q1/Q2 in a half-bridge configuration. This can replace two discrete Q1/Q2 MOSFETs ex: PQFN 5x6 and shrink the power section on the board by at least 50%.
The low parasitic inductance of the package improves switching performance & EMI while reducing overall BOM cost. The dual-side cooling capability boosts power throughput by an additional 25% with superior thermal management.
特征描述
- Cutting edge OptiMOS™ silicon technology
- Outstanding FOMs
- High chip/package ratio
- Optimized lead-frame and Cu-clip design
- Internally connected Q1/Q2 MOSFETs
- Compact and simplified layout design
- Dual-side cooling
优势
- Minimized conduction losses
- Reduced voltage overshoot
- High power capability
- Superior thermal performance
- Lowest loop inductance
- Superior switching performance/EMI
- Superior thermal management
潜在应用
支持
