ISG0614N06NM5H

综述

OptiMOS™ 5 dual N-channel 60 V MOSFETs in scalable power block

Dual N-channel MOSFETs in PQFN 6.3x6.0 features low RDS(on) of 1.6 mΩ each with Q1/Q2 in a half-bridge configuration. This can replace two discrete Q1/Q2 MOSFETs ex: PQFN 5x6 and shrink the power section on the board by at least 50%.

The low parasitic inductance of the package improves switching performance & EMI while reducing overall BOM cost. The optimized lead-frame & Cu-clip significantly improves the package thermal performance. 

特征描述

  • Cutting edge OptiMOS™ silicon technology
  • Outstanding FOMs
  • High chip/package ratio
  • Optimized lead-frame and Cu-clip design
  • Internally connected Q1/Q2 MOSFETs
  • Compact and simplified layout design 

优势

  • Minimized conduction losses
  • Reduced voltage overshoot
  • High power capability
  • Superior thermal performance
  • Lowest loop inductance
  • Superior switching performance/EMI
支持