ISC031N08NM6SC

综述

OptiMOS™ 6 n-channel power MOSFET 80 V in SuperSO8 Dual-Side Cooling

OptiMOS™ 6 80 V - the latest power MOSFET technology offering industry benchmark performance.

Compared to its predecessor, OptiMOS™ 5, Infineon's latest wafer technology offers significant performance improvement, including >21% lower RDS(on) and ~40% improved FOMQg x RDS(on) in SuperSO8 DSC.

The performance improvements lead to higher system efficiency and power density.

特征描述

  • High performance silicon technology
  • RDS(on) optimized for target application 
  • Low top-side RthJC (0/72 K/W)
  • 175°C rated
  • Industrial qualification

优势

  • Lower conduction losses than OptiMOS™ 5
  • Lower switching losses than OptiMOS™ 5
  • Improved heat dissipation
  • Improved power, SOA & avalanche current
  • Robust reliable performance
  • Drop-in replacement for SuperSO8
支持