IRF7910
综述
优势
- Planar cell structure for wide SOA
- Optimized for broadest availability from distribution partners
- Product qualification according to JEDEC standard
- Silicon optimized for applications switching below <100KHz
- Industry standard surface-mount power package
- Capable of being wave-soldered
12V 双 N 通道 HEXFET Power MOSFET, 采用 SO-8 封装
优势
- 符合 RoHS
- 经过充分验证的雪崩电压和电流
- 低栅漏电荷，可降低开关损耗
- 经过充分验证的的电容，包括有效的Coss以简化设计
- 双 N 通道 MOSFET
质量
支持
