IRF6655

综述

100V 单个 N 通道 HEXFET Power MOSFET, 采用 DirectFET SH 封装，额定电流为19A。

优势

  • Optimized for broadest availability from distribution partners
  • Product qualification according to JEDEC standard
  • Normal level : Optimized for 10 V gate drive voltage
  • Dual-side cooling capability
  • Low package height of 0.7 mm
  • Low- parasitic (1-2 nH) inductance package
  • 100% Lead-free (No ROHS exemption)
质量

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支持