IQFH61N06NM5
综述
OptiMOS™ 5 60 V power MOSFETs in compact, high performance PQFN 8x6 package with benchmark RDS(on) in the industry
This 60 V normal-level power MOSFET comes in our latest innovative, compact clip-based PQFN 8x6 mm2 package enabling very high currents and power levels. The part offers current industry-best RDS(on) of 0.61 mΩ combined with outstanding thermal performance.
This enables higher system efficiency and power density for a large variety of end applications like battery-powered applications, battery management, low-voltage drives and SMPS.
特征描述
- Cutting edge OptiMOS™ silicon technology
- Outstanding FOMs
- High chip/package ratio
- Optimized lead-frame and Cu-Clip design
- Internally connected Q1/Q2 MOSFETs
- Compact and simplified layout design
- Dual-side cooling
优势
- Minimized conduction losses
- High power capability
- Superior device performance
- Reduced voltage overshoot
- Superior thermal performance
- Re-use board for multiple power levels
- Superior switching performance/EMI
潜在应用
支持
