IQFH55N04NM6

综述

OptiMOS™ 6 40 V power MOSFETs in compact, high performance PQFN 8x6 package with ultra-low RDS(on)

This 40 V normal-level power MOSFET comes in our latest innovative, compact clip-based PQFN 8x6 mm2 package enabling very high currents and power levels. The part offers current ultra-low RDS(on) of 0.55 mΩ combined with outstanding thermal performance.

This enables higher system efficiency and power density for a large variety of end applications like battery-powered applications, battery management, low-voltage drives and SMPS.

特征描述

  • Cutting edge OptiMOS™ silicon technology
  • High chip/package ratio
  • Ultra high currents in compact footprint
  • Ultra-low package parasitics
  • Optimized lead-frame and Cu-Clip design
  • Footprint compatibility with PQFN 5x6
  • Compact layout with less paralleling

优势

  • Minimized conduction losses
  • High power capability
  • Superior device performance
  • Reduced voltage overshoot
  • Superior thermal performance
  • Re-use board for multiple power levels
  • Superior switching performance/EMI
支持